首页> 外文OA文献 >An 80 Mbit/s radiation-tolerant optical receiver for the CMS digital optical link
【2h】

An 80 Mbit/s radiation-tolerant optical receiver for the CMS digital optical link

机译:用于CMS数字光链路的80 Mbit / s耐辐射光接收器

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

The CMS tracker slow control system will use approximately 1000 digital optical links for the transmission of timing, trigger and control signals. In this system, the 80 Mbit/s optical receiver at the detector end of each optical link has to be radiation hard since it will operate in the severe radiation environment of the CMS tracker (10 Mrad in 10 years). We have developed a prototype circuit in a 0.25 mu m commercial CMOS process using radiation tolerant layout practices to achieve the required radiation tolerance. This effective technique consists in the systematic use of enclosed (edgeless) NMOS transistors and guardrings, and relies in the natural total dose hardness of the thin gate oxide of deep submicron processes. The circuit features an automatic gain control loop allowing detection of wide dynamic range input signals (-20 to -3 d Bm) with minimum noise, compatible with the maximum expected radiation-induced drop in quantum efficiency of the PIN photodiode. A second feedback loop compensates a photodiode leakage current up to 100 mu A, and the circuit outputs an LVDS signal. Four receiver channels were integrated in a 2*2 mm/sup 2/ chip, out of which two were simultaneously bonded to two PIN photodiodes, and their BER performance was measured before and after an irradiation with 10 keV X-rays up to 20 Mrad (SiO/sub 2/). (11 refs).
机译:CMS跟踪器慢速控制系统将使用大约1000条数字光链路来传输定时,触发和控制信号。在此系统中,每个光链路检测器端的80 Mbit / s光接收器必须具有很高的辐射强度,因为它将在CMS跟踪器的恶劣辐射环境(10年内达到10 Mrad)下运行。我们已经在0.25微米的商用CMOS工艺中开发了一种原型电路,该电路使用耐辐射的布局实践来达到所需的耐辐射性。这种有效的技术在于系统地使用封闭的(无边缘)NMOS晶体管和保护环,并依赖于深亚微米工艺的薄栅极氧化物的自然总剂量硬度。该电路具有一个自动增益控制环路,该环路允许以最小的噪声检测宽动态范围的输入信号(-20至-3 d Bm),这与PIN光电二极管的最大预期辐射引起的量子效率下降兼容。第二个反馈环路补偿高达100μA的光电二极管泄漏电流,并且该电路输出LVDS信号。四个接收器通道集成在一个2 * 2 mm / sup 2 /芯片中,其中两个同时绑定到两个PIN光电二极管,并且在受到最高20 Mrad的10 keV X射线照射之前和之后测量了它们的BER性能。 (SiO / sub 2 /)。 (11个裁判)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号